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Référence et coordonnées

Références

NomAggour

PrénomMohammed

ProfessionProfesseur d’Enseignement Supérieur (PES)

PaysMaroc

VilleKénitra

Organisme de rattachementUniversité Ibn Tofail - Kénitra . Faculté des Sciences - Kénitra

Coordonnées

Adresse Faculté des sciences de Kénitra. BP 133, code postal : 14000

Téléphone0537 32 93 76

Fax0537 32 94 33

E-mailaggourmo@yahoo.fr

Formation supérieure

DiplomeDoctorat d’Etat

SpécialitéPhsique des semiconducteurs

EtablissementTechnische Universität Berlin-RFA

Date d'obtention1995

DiplomeAutres

SpécialitéPhotovoltaïque Energie solaire

Etablissement Université Mohammed V.Faculté des Sciences-Rabat

Date d'obtention1987

Langue

Arabe; Allemand; Anglais; Français;

Domaines de compétence

Physique des composant semi conducteurs;Énergie solaire;Photo-électrochimie

Projets de recherche

Projet

Photoelectrochemical purification of water

Mots clès

Eau;Purification;Électrochimie

Projet

Photoelectrochemical purification of water

Mots clès

Eau;Purification;Électrochimie

Production Scientifique et technologique

Communication

A. Ennaoui;M. Aggour;H.J. Lewerenz . Correlation between the Interface Condition and dark Current Transient on nSi(111) In : Third European Workshop on Electrochemical Processing of Semiconductors , , Paris

M. Aggour;A. Ennaoui;H.J. Lewerenz . Determination of Interface States at Electrochemically Hydrogenated nSi(111) and nSi(100) by in Situ AC Impedance Spectroscopy In : hird European Workshop on Electrochemical Processing of Semiconductors , 06-11-1996, Paris

F. Bensliman;M.Aggour;A.Ennaoui;H. Fukidome;M. Matsumura . Electrochemical monitoring of flattened Si(111) surface in oxygenfree water In : 60th Autumn Meeting of Japan Society of Applied Physics , , Japan

F. Bensliman;M. Aggour;A. Ennaoui;H. Fukidome;M. Matsumura . Electrochemical monitoring of flattened Si(111) surface in oxygenfree water In : Symposium on Atomic Level Structure of Silicon Surfaces and Wet Processes , , okasa

U. Störkel;M. Aggour;M. Weber;R. Scheer;H.J. Lewerenz . Chemical and electrochemical treatment of CuInS2 In : Sixteenth European Photovoltaic Solar Energy Conference, proceedings of the international conference , 15-05-2000, Glasgow

U. Störkel;M. Aggour;C.P. Murrell;H.J. Lewerenz . Electrochemical treatment of CuInS2 In : EMRS Spring Meeting , , Strasbourg

Chraibi F.; Fahoume M. ;Aggour M.;Delplancke J. L; Ennaoui A.; LuxSteiner M . One step electrodeposited CuInSe2 thin films: Influence of citrate as complexing agent and annealing. Proc In : 17th European Photovoltaic Solar Energy conference , , Munich

Fahoume F.;Chraibi M.;Aggour M.;Delplancke J. L.;Ennaoui A.;LuxSteiner M.C . One step electrodeposited CuIn1xGaxSe2 thin films: Structure and Morphology. Proc In : 17th European Photovoltaic Solar Energy conference , , Munich

M. Aggour;U. Störkel;C. Murrell;S. A. Campbell;H. Jungblut;P. Hoffmann;R. Mikalo;D. Schmeißer; H. J. Lewerenz . Interface Modification of CuInS2 Thin Films In : EMRS Spring Meeting , , Strasbourg

#10

S. A. Campbell;P. Hoffmann;D. Schmeisser . nitial stages of structure formation on Si electrode investigated by photoelectron spectroscopy using synchrotron radiation and insitu AFM In : International Society of Electrochemistry and the Electrochemical Society of America , , USA

#11

H.Jungblut;J. Jakubowicz;M. Aggour;C. Murrell;P. Hoffmann;H. J. Lewerenz . Successive Nanoroughening of Si (111): A Combined Synchrotron Radiation Photoelectron Spectroscopy and AFM Study In : 9th Annual International Conference on Composites Engineering , , San Diego, California

#12

H.J. Lewerenz;H. Jungblut;M. Aggour;C. Murrell;M. Kanis;E. Goncalves;E. Ruether;J. Jakubowicz; P.A. Cox . The early stages of Si roughening in fluoridic media: a surface analytical study using synchrotron radiation photoelectron spectroscopy and scanning probe microscopy Proc In : 203rd Meeting of The Electrochemical Society , , Paris

#13

M. Aggour;C. Murrell;H. Jungblut;M. Kanis;E. Goncalves;M. Gaul;M. Winkelnkemper;H. J. Lewerenz . electrochemically induced surface transformations at polycristalline CuInS2 solar cell absorbers Proc In : 203rd Meeting of the Electrochemical Society (ECS) , , Paris

#14

H. J. Lewerenz;M. Aggour;J. Jakubowicz;C. Murrell;M. Kanis;H. Jungblut . Self Organized and Induced Nanopit Formation on Silicon Investigated by Synchrotron Radiation Photoelectron Spectroscopy and Atomic Force Microscopy; Proc In : 204rd Meeting of the Electrochemical Society (ECS) , , Orlando

#15

M. Aggour;C. Murrell;H. Jungblut;H. J. Lewerenz . Anodic modification of CuInS2/CuS thin film systems Proc In : EMRS (Spring Meeting of the European Materials Research Society) , , Strasbourg

Article de périodique

F. Yahyaoui;Th.Dittrich;Th.Burke;M. Aggour;S.Lust;C.Lévy-Clément;J.Rappich . Band bending and nonradiative recombination at Si surfaces during electrochemcial treatment in aqueous fluoride solution J. Electrochem. Soc , 2002.

M. Lharch;M. Aggour;J.-N. Chazalviel;F. Ozanam . Anodic Dissolution and Electroluminescence of p-Si at High Potentials in Fluoride Media. J. Electrochem. Soc , 2002.

U. Störkel;M. Aggour;C. Murrell;H. J. Lewerenz . Electrochemical Treatment of CuInS2. Thin Solid Films , 2001.

H.J. Lewerenz;M. Aggour;Chr. Murrel;M. Kanis;P. Hoffmann;H.Jungblut;D. Schmeißer . Interface engineering of photo electrochemically prepared Si surfaces. Journal of Non-Crystalline Solids , 2002.

M. Aggour;U. Störkel;C. Murrell;S.A. Campbell;H. Jungblut;P. Hoffmann;R. Mikalo;D. Schmeißer;H.J. Lewerenz . Electrochemical Interface Modification of CuInS2 Thin Films. Thin Solid Films , 2002.

U. Störkel;M. Aggour;C.P. Murrel;H.J. Lewerenz . Electrochemical treatment of CuInS2. Thin Solid Films , 2001.

U. Störkel;M. Aggour;H.J. Lewerenz . Surface Chemistry and Electrochemistry of CuInS2 Thin Film Electrodes, Recent Res. Devel. Electroanal. Chem , 2000.

M. Aggour;H.J. Lewerenz;J. Klaer;U. Störkel . Electrochemical Processing of Surface Layers on CuInS2 Thin Film Solar Cell Absorbers. Electrochem. Solid-State Lett , 2000.

F. Bensliman;M. Aggour;A. Ennaoui;Y: HirotaM. Matsumura . Analysis of Si-F bonds on Si(111) surface by electrochemical methode. Electrochem. Solid-State Lett , 2000.

#10

F. Bensliman;M. Aggour;A. Ennaoui;M. Matsumura . Electrochemical methode for evaluation of structural perfection of hydrogen-terminated Si(111) surface. Jpn. J. Appl. Phys , 2000.

#11

M. Aggour;F. Bensliman;F.Z. Yahyaoui;M. Fahoume;A. Ennaoui;H.J. Lewerenz . Analysis of n-Si(111) during photocurrent oscillations in Fluoridric solutions. M. J. Cond. Matt , 1998.

#12

M. Fahoume;F. Chraibi;M. Aggour;A. Ennaoui . Preparation and characterisation of electrodeposited CuInSe2 thin films. Annale de Chimie-Sciences des Matériaux , 1998.

#13

J. Rappich;M. Aggour;S. Rauscher;H. Jungblut;H. J. Lewerenz . Electrochemical Surface conditioning of n-Si(111). Surf. Sci , 1995.

#14

K. Jacobi;M. Gruyters;P. Geng;T. Bitzer;M. Aggour;S. Rauscher;H. J. Lewerenz . Hydrogenation of Si(113) surface by (photo)electrochemical treatment. Phys. Rev. B , 1995.

#15

T. Dittrich;S. Rauscher;T. Bitzer;M. Aggour;J. Rappich;H. Flietner;H. J. Lewerenz . Electronic properties of n-Si(111) during electrochemical surface transformation towards H-termination. J. Electrochem. Soc , 1995.

#16

S. Rauscher;T. Dittrich;M. Aggour;J. Rappich;H. Flietner;H. J. Lewerenz . Reduced interface state density after photocurrent oscillations and electrochemical hydrogenation of n-Si(111): A Surface photovoltage investigation. Appl. Phys. Lett , 1995.

#17

M. Aggour;M. Giersig; H. J. Lewerenz . Interface condition of n-Si(111) during photocurrent oscillations in NH4F solutions. J. Electroanal. Chem , 1995.

#18

J. Rappich;H. Jungblut;M. Aggour;H. J. Lewerenz . Electrochemical Smoothing of Silicon(111). J. Electrochem, Soc , 1994.

#19

H. J. Lewerenz;M. Aggour . On the origin of photocurrent oscillation at Si electrodes. J. Electroanal. Chem , 1993.

#20

H. Jungblut;D. Müller;M. Aggour;H. J. Lewerenz . Scanning Tunnelling Microscopy observation of atomic structurees on Silicon(100) surface in air. Electrochimica Acta 38 , 1993.